Zenode.ai Logo
Beta
TO-18
Discrete Semiconductor Products

JANKCB2N2907A

Active
Microchip Technology

SMALL-SIGNAL BJT DIE ROHS COMPLIANT: YES

Deep-Dive with AI

Search across all available documentation for this part.

TO-18
Discrete Semiconductor Products

JANKCB2N2907A

Active
Microchip Technology

SMALL-SIGNAL BJT DIE ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANKCB2N2907A
Current - Collector (Ic) (Max) [Max]600 mA
Current - Collector Cutoff (Max) [Max]50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
GradeMilitary
Mounting TypeThrough Hole
Package / CaseTO-18-3 Metal Can, TO-206AA
Power - Max [Max]500 mW
QualificationMIL-PRF-19500/291
Supplier Device PackageTO-18
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1.6 V
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 100$ 17.47
NewarkEach 100$ 17.47
500$ 16.80

Description

General part information

JANTXV2N2907AUB-Transistor Series

This specification covers the performance requirements for PNP, silicon, switching 2N2906A and 2N2907A transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type, and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device, as specified in MIL-PRF-19500/291. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Documents

Technical documentation and resources

No documents available