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Discrete Semiconductor Products

JANSL2N2907AUB/TR

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Microchip Technology

TRANS PNP 60V 0.6A UB

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UB
Discrete Semiconductor Products

JANSL2N2907AUB/TR

Active
Microchip Technology

TRANS PNP 60V 0.6A UB

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANSL2N2907AUB/TR
Current - Collector (Ic) (Max) [Max]600 mA
Current - Collector Cutoff (Max) [Max]50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
GradeMilitary
Mounting TypeSurface Mount
Operating Temperature [Max]200 °C
Operating Temperature [Min]-65 ░C
Package / Case3-SMD, No Lead
Power - Max [Max]500 mW
QualificationMIL-PRF-19500/291
Supplier Device PackageUB
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1.6 V
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 50$ 101.45
100$ 94.20

Description

General part information

JANTXV2N2907AUB-Transistor Series

This specification covers the performance requirements for PNP, silicon, switching 2N2906A and 2N2907A transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type, and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device, as specified in MIL-PRF-19500/291. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Documents

Technical documentation and resources

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