Part	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Configuration	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Supplier Device Package	Mounting Type	FET Feature	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDS6894A	8 A	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	2 N-Channel (Dual)	20 V	-55 °C	150 °C	1676 pF	24 nC	900 mW	8-SOIC	Surface Mount	Logic Level Gate	1.5 V
ON Semiconductor FDS6892A	7.5 A	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	2 N-Channel (Dual)	20 V	-55 °C	150 °C	1333 pF	17 nC	900 mW	8-SOIC	Surface Mount	Logic Level Gate	1.5 V	18 mOhm
ON Semiconductor FDS6875	6 A	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	2 P-Channel	20 V	-55 °C	150 °C	2250 pF		900 mW	8-SOIC	Surface Mount	Logic Level Gate	1.5 V		31 nC	30 mOhm
ON Semiconductor FDS6894A	8 A	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	2 N-Channel (Dual)	20 V	-55 °C	150 °C	1676 pF	24 nC	900 mW	8-SOIC	Surface Mount	Logic Level Gate	1.5 V
ON Semiconductor FDS6892A	7.5 A	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	2 N-Channel (Dual)	20 V	-55 °C	150 °C	1333 pF	17 nC	900 mW	8-SOIC	Surface Mount	Logic Level Gate	1.5 V	18 mOhm
ON Semiconductor FDS6898AZ-F085

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

FDS6898AZ_F085 Series

These P-Channel 2.5V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.