Discrete Semiconductor Products

FDS6875

LTB

ON Semiconductor

DUAL P-CHANNEL 2.5V SPECIFIED POWERTRENCH™ MOSFET -20V, -6A, 30MΩ

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Search across all available documentation for this part.

DocumentsDatasheet Product Change Notice EN +4

Discrete Semiconductor Products

FDS6875

LTB

ON Semiconductor

DUAL P-CHANNEL 2.5V SPECIFIED POWERTRENCH™ MOSFET -20V, -6A, 30MΩ

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN +4

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDS6875

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds	2250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	900 mW
Rds On (Max) @ Id, Vgs [Max]	30 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

FDS6898AZ_F085 Series

Dual N-Channel Logic Level PWM Optimized PowerTrench<sup>®</sup> MOSFET 20V, 7.5A, 18mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Configuration	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Supplier Device Package	Mounting Type	FET Feature	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDS6894A	8 A	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	2 N-Channel (Dual)	20 V	-55 °C	150 °C	1676 pF	24 nC	900 mW	8-SOIC	Surface Mount	Logic Level Gate	1.5 V
ON Semiconductor FDS6892A	7.5 A	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	2 N-Channel (Dual)	20 V	-55 °C	150 °C	1333 pF	17 nC	900 mW	8-SOIC	Surface Mount	Logic Level Gate	1.5 V	18 mOhm
ON Semiconductor FDS6875	6 A	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	2 P-Channel	20 V	-55 °C	150 °C	2250 pF		900 mW	8-SOIC	Surface Mount	Logic Level Gate	1.5 V		31 nC	30 mOhm
ON Semiconductor FDS6894A	8 A	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	2 N-Channel (Dual)	20 V	-55 °C	150 °C	1676 pF	24 nC	900 mW	8-SOIC	Surface Mount	Logic Level Gate	1.5 V
ON Semiconductor FDS6892A	7.5 A	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	2 N-Channel (Dual)	20 V	-55 °C	150 °C	1333 pF	17 nC	900 mW	8-SOIC	Surface Mount	Logic Level Gate	1.5 V	18 mOhm
ON Semiconductor FDS6898AZ-F085

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.30
		10	$ 1.06
		100	$ 0.83
		500	$ 0.70
		1000	$ 0.57
	Digi-Reel®	1	$ 1.30
		10	$ 1.06
		100	$ 0.83
		500	$ 0.70
		1000	$ 0.57
	Tape & Reel (TR)	2500	$ 0.54
		5000	$ 0.51
		12500	$ 0.49
Newark	Each (Supplied on Cut Tape)	1000	$ 0.64

Description

General part information

FDS6898AZ_F085 Series

These P-Channel 2.5V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.

Documents

Technical documentation and resources

Datasheet

FDS6875

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FDS6875

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Technical Specifications

FDS6898AZ_F085 Series

Pricing

Description

FDS6898AZ_F085 Series

Documents

Datasheet

Product Change Notice EN

Technical Data Sheet EN

EOL Notices EN

Reactivation Notices EN

Package Drawing-751EB-SOIC8

FDS6898AZ_F085 Series