FDS6898AZ_F085 Series

Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 7.5A, 18mΩ

Catalog

Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 7.5A, 18mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Configuration	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Supplier Device Package	Mounting Type	FET Feature	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDS6894A	8 A	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	2 N-Channel (Dual)	20 V	-55 °C	150 °C	1676 pF	24 nC	900 mW	8-SOIC	Surface Mount	Logic Level Gate	1.5 V
ON Semiconductor FDS6892A	7.5 A	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	2 N-Channel (Dual)	20 V	-55 °C	150 °C	1333 pF	17 nC	900 mW	8-SOIC	Surface Mount	Logic Level Gate	1.5 V	18 mOhm
ON Semiconductor FDS6875	6 A	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	2 P-Channel	20 V	-55 °C	150 °C	2250 pF		900 mW	8-SOIC	Surface Mount	Logic Level Gate	1.5 V		31 nC	30 mOhm
ON Semiconductor FDS6894A	8 A	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	2 N-Channel (Dual)	20 V	-55 °C	150 °C	1676 pF	24 nC	900 mW	8-SOIC	Surface Mount	Logic Level Gate	1.5 V
ON Semiconductor FDS6892A	7.5 A	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	2 N-Channel (Dual)	20 V	-55 °C	150 °C	1333 pF	17 nC	900 mW	8-SOIC	Surface Mount	Logic Level Gate	1.5 V	18 mOhm
ON Semiconductor FDS6898AZ-F085

Catalog

Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 7.5A, 18mΩ

Key Features

• 9.4 A, 20 VRDS(ON)= 14mΩ, @VGS= 4.5VRDS(ON)= 18mΩ, @VGS= 2.5V

• Low gate charge (16 nC typical)

• ESD protection diode (note 3)

• High performance trench technology for extremelylow RDS(ON)

• High power and current handling capability

• Qualified to AEC Q101

• RoHS compliant

Description

These P-Channel 2.5V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.