HMC8411LP2FE
ActiveRF AMPLIFIER, 10 MHZ TO 10 GHZ, 7 V SUPPLY, LFCSP-6, -40 °C TO 85 °C
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HMC8411LP2FE
ActiveRF AMPLIFIER, 10 MHZ TO 10 GHZ, 7 V SUPPLY, LFCSP-6, -40 °C TO 85 °C
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | HMC8411LP2FE |
|---|---|
| Current - Supply | 55 mA |
| Gain | 14 dBi |
| Mounting Type | Surface Mount |
| Noise Figure | 2 dB |
| P1dB | 17 dBm |
| Package / Case | 6-VDFN Exposed Pad, CSP |
| RF Type | General Purpose |
| Supplier Device Package | 6-LFCSP (2x2) |
| Test Frequency [Max] | 10 GHz |
| Test Frequency [Min] | 6 GHz |
| Voltage - Supply [Max] | 6 V |
| Voltage - Supply [Min] | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
HMC8411 Series
The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz.The HMC8411LP2FE provides a typical gain of 15.5 dB, a 1.7 dB typical noise figure, and a typical output third-order intercept (OIP3) of 34 dBm, requiring only 55 mA from a 5 V supply voltage. The saturated output power (PSAT) of 19.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q), or image rejection mixers.The HMC8411LP2FE also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.The HMC8411LP2FE is housed in a RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP.Multifunction pin names may be referenced by their relevant function only.ApplicationsTest instrumentationMilitary communications
