Catalog
Low Noise Amplifier, 0.01 GHz to 10 GHz
Key Features
• Low noise figure: 1.7 dB typical
• Single positive supply (self biased)
• High gain: 15.5 dB typical
• High OIP3: 34 dBm typical
• 6-lead, 2 mm × 2 mm LFCSP
• Download theHMC8411TCPZ-EP data sheet(pdf)
• Military temperature range (−55°C to +125°C)
• Controlled manufacturing baseline
• 1 assembly/test site
• 1 fabrication site
• Product change notification
• Qualification data available on request
• V62/19617 DSCC Drawing Number
Description
AI
The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz.The HMC8411LP2FE provides a typical gain of 15.5 dB, a 1.7 dB typical noise figure, and a typical output third-order intercept (OIP3) of 34 dBm, requiring only 55 mA from a 5 V supply voltage. The saturated output power (PSAT) of 19.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q), or image rejection mixers.The HMC8411LP2FE also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.The HMC8411LP2FE is housed in a RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP.Multifunction pin names may be referenced by their relevant function only.ApplicationsTest instrumentationMilitary communications
