Discrete Semiconductor Products

NTNS3A67PZT5G

Obsolete

MOSFET PFET SOT883 20V 281MA 1.3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET PFET SOT883 20V 281MA 1.3

Technical Specifications

Parameters and characteristics for this part

Single P Channel Small Signal MOSFET -20V, -223mA, 1.6Ω

Part	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]	Mounting Type	Package / Case	Power Dissipation (Max)	Vgs (Max)	FET Type	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]
ON Semiconductor NTNS3A67PZT5G	SOT-883 XDFN3	1	0.6	Surface Mount	3-XFDFN
ON Semiconductor NTNS3A91PZT5G	3-XLLGA (0.62x0.62)			Surface Mount	3-XFLGA	121 mW	8 V	P-Channel	MOSFET (Metal Oxide)	1 V	1.5 V 4.5 V	41 pF	1.6 Ohm	223 mA	1.1 nC	-55 °C	150 °C	20 V
ON Semiconductor NTNS3A65PZT5G	SOT-883 XDFN3	1	0.6	Surface Mount	3-XFDFN		8 V	P-Channel	MOSFET (Metal Oxide)	1 V	1.5 V 4.5 V	44 pF	1.3 Ohm	281 mA	1.1 nC	-55 °C	150 °C	20 V	155 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Small Signal MOSFET−20 V, −281 mA, Single P−Channel,SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package

Technical documentation and resources

No documents available