Specification	NTNS3A65PZT5G

Current - Continuous Drain (Id) @ 25°C	281 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.1 nC
Input Capacitance (Ciss) (Max) @ Vds	44 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max) [Max]	155 mW
Rds On (Max) @ Id, Vgs	1.3 Ohm
Supplier Device Package	SOT-883, XDFN3
Supplier Device Package [x]	1
Supplier Device Package [y]	0.6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

NTNS3A91PZ Series

Single P Channel Small Signal MOSFET -20V, -223mA, 1.6Ω

Part	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]	Mounting Type	Package / Case	Power Dissipation (Max)	Vgs (Max)	FET Type	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]
ON Semiconductor NTNS3A67PZT5G	SOT-883 XDFN3	1	0.6	Surface Mount	3-XFDFN
ON Semiconductor NTNS3A91PZT5G	3-XLLGA (0.62x0.62)			Surface Mount	3-XFLGA	121 mW	8 V	P-Channel	MOSFET (Metal Oxide)	1 V	1.5 V 4.5 V	41 pF	1.6 Ohm	223 mA	1.1 nC	-55 °C	150 °C	20 V
ON Semiconductor NTNS3A65PZT5G	SOT-883 XDFN3	1	0.6	Surface Mount	3-XFDFN		8 V	P-Channel	MOSFET (Metal Oxide)	1 V	1.5 V 4.5 V	44 pF	1.3 Ohm	281 mA	1.1 nC	-55 °C	150 °C	20 V	155 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Small Signal MOSFET−20 V, −281 mA, Single P−Channel,SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package