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8 SOIC
Discrete Semiconductor Products

NTMSD3P102R2G

Obsolete
ON Semiconductor

P-CHANNEL ENHANCEMENT-MODE POWER MOSFET AND SCHOTTKY DIODE DUAL SO-8 PACKAGE

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8 SOIC
Discrete Semiconductor Products

NTMSD3P102R2G

Obsolete
ON Semiconductor

P-CHANNEL ENHANCEMENT-MODE POWER MOSFET AND SCHOTTKY DIODE DUAL SO-8 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNTMSD3P102R2G
Current - Continuous Drain (Id) @ 25°C2.34 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]25 nC
Input Capacitance (Ciss) (Max) @ Vds750 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)730 mW
Rds On (Max) @ Id, Vgs85 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

NTMSD3P102 Series

P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package

Documents

Technical documentation and resources