NTMSD3P102 Series

FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package

Catalog

FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package

Part	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Rds On (Max) @ Id, Vgs	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTMSD3P102R2G	20 V	8-SOIC	3.9 mm	0.154 in	Surface Mount	85 mOhm	Schottky Diode (Isolated)	750 pF	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	730 mW	2.5 V	8-SOIC	P-Channel	25 nC	-55 °C	150 °C	2.34 A
ON Semiconductor NTMSD3P303R2
ON Semiconductor NTMSD3P102R2	20 V	8-SOIC	3.9 mm	0.154 in	Surface Mount	85 mOhm	Schottky Diode (Isolated)	750 pF	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	730 mW	2.5 V	8-SOIC	P-Channel	25 nC	-55 °C	150 °C	2.34 A

FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package

• High Efficiency Components in a Single SO-8 Package

• High Density Power MOSFET with Low RDS(on), Schottky Diode with Low VF

• Independent Pin-Outs for MOSFET and Schottky Die Allowing for Flexibility in Application Use

• Less Component Placement for Board Space Savings

• SO-8 Surface Mount Package, Mounting Information for SO-8 Package Provided

• Pb-Free Package is Available

P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package