Discrete Semiconductor Products

NTMSD3P303R2

Obsolete

FETKY™ P-CHANNEL ENHANCEMENT-MODE POWER MOSFET AND SCHOTTKY DIODE DUAL SO-8 PACKAGE

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Discrete Semiconductor Products

Obsolete

FETKY™ P-CHANNEL ENHANCEMENT-MODE POWER MOSFET AND SCHOTTKY DIODE DUAL SO-8 PACKAGE

Technical Specifications

Parameters and characteristics for this part

Specification	NTMSD3P303R2

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FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package

Part	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Rds On (Max) @ Id, Vgs	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTMSD3P102R2G	20 V	8-SOIC	3.9 mm	0.154 in	Surface Mount	85 mOhm	Schottky Diode (Isolated)	750 pF	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	730 mW	2.5 V	8-SOIC	P-Channel	25 nC	-55 °C	150 °C	2.34 A
ON Semiconductor NTMSD3P303R2
ON Semiconductor NTMSD3P102R2	20 V	8-SOIC	3.9 mm	0.154 in	Surface Mount	85 mOhm	Schottky Diode (Isolated)	750 pF	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	730 mW	2.5 V	8-SOIC	P-Channel	25 nC	-55 °C	150 °C	2.34 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1402	$ 0.21

General part information

P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package

Technical documentation and resources