Discrete Semiconductor Products

FDP8878

Obsolete

ON Semiconductor

MOSFET N-CH 30V 40A TO220-3

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Discrete Semiconductor Products

FDP8878

Obsolete

ON Semiconductor

MOSFET N-CH 30V 40A TO220-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDP8878

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	1235 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	40.5 W
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

FDP8860 Series

N-Channel PowerTrench<sup>®</sup> MOSFET 30V, 156A, 4.1mΩ

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDP8860	2.5 mOhm	4.5 V 10 V	TO-220-3	TO-220-3	Through Hole	MOSFET (Metal Oxide)	222 nC	2.5 V	20 V	N-Channel	12240 pF	-55 °C	175 ░C	30 V	254 W
ON Semiconductor FDP8874	5.3 mOhm	4.5 V 10 V	TO-220-3	TO-220-3	Through Hole	MOSFET (Metal Oxide)	72 nC	2.5 V	20 V	N-Channel		-55 °C	175 ░C	30 V		3130 pF	110 W	16 A 114 A
ON Semiconductor FDP8870	4.1 mOhm	4.5 V 10 V	TO-220-3	TO-220-3	Through Hole	MOSFET (Metal Oxide)		2.5 V	20 V	N-Channel		-55 °C	175 ░C	30 V		5200 pF		19 A 156 A	132 nC
ON Semiconductor FDP8860	2.5 mOhm	4.5 V 10 V	TO-220-3	TO-220-3	Through Hole	MOSFET (Metal Oxide)	222 nC	2.5 V	20 V	N-Channel	12240 pF	-55 °C	155 °C	30 V	254 W
ON Semiconductor FDP8878	15 mOhm	4.5 V 10 V	TO-220-3	TO-220-3	Through Hole	MOSFET (Metal Oxide)	23 nC	2.5 V	20 V	N-Channel		-55 °C	175 ░C	30 V		1235 pF	40.5 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDP8860 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON)and fast switching speed.

Documents

Technical documentation and resources