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TO-220-3
Discrete Semiconductor Products

FDP8860

Obsolete
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30V, 80A, 2.5MΩ

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TO-220-3
Discrete Semiconductor Products

FDP8860

Obsolete
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30V, 80A, 2.5MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDP8860
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs222 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]12240 pF
Mounting TypeThrough Hole
Operating Temperature [Max]155 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)254 W
Rds On (Max) @ Id, Vgs2.5 mOhm
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 239$ 1.26
239$ 1.26

Description

General part information

FDP8860 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON)and fast switching speed.

Documents

Technical documentation and resources