
Discrete Semiconductor Products
FDP8860
ObsoleteON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30V, 80A, 2.5MΩ
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Discrete Semiconductor Products
FDP8860
ObsoleteON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30V, 80A, 2.5MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDP8860 |
|---|---|
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 222 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 12240 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 155 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 254 W |
| Rds On (Max) @ Id, Vgs | 2.5 mOhm |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 239 | $ 1.26 | |
| 239 | $ 1.26 | |||
Description
General part information
FDP8860 Series
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON)and fast switching speed.
Documents
Technical documentation and resources