FDP8860 Series

N-Channel PowerTrench® MOSFET 30V, 156A, 4.1mΩ

Catalog

N-Channel PowerTrench® MOSFET 30V, 156A, 4.1mΩ

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDP8860	2.5 mOhm	4.5 V 10 V	TO-220-3	TO-220-3	Through Hole	MOSFET (Metal Oxide)	222 nC	2.5 V	20 V	N-Channel	12240 pF	-55 °C	175 ░C	30 V	254 W
ON Semiconductor FDP8874	5.3 mOhm	4.5 V 10 V	TO-220-3	TO-220-3	Through Hole	MOSFET (Metal Oxide)	72 nC	2.5 V	20 V	N-Channel		-55 °C	175 ░C	30 V		3130 pF	110 W	16 A 114 A
ON Semiconductor FDP8870	4.1 mOhm	4.5 V 10 V	TO-220-3	TO-220-3	Through Hole	MOSFET (Metal Oxide)		2.5 V	20 V	N-Channel		-55 °C	175 ░C	30 V		5200 pF		19 A 156 A	132 nC
ON Semiconductor FDP8860	2.5 mOhm	4.5 V 10 V	TO-220-3	TO-220-3	Through Hole	MOSFET (Metal Oxide)	222 nC	2.5 V	20 V	N-Channel	12240 pF	-55 °C	155 °C	30 V	254 W
ON Semiconductor FDP8878	15 mOhm	4.5 V 10 V	TO-220-3	TO-220-3	Through Hole	MOSFET (Metal Oxide)	23 nC	2.5 V	20 V	N-Channel		-55 °C	175 ░C	30 V		1235 pF	40.5 W

Catalog

N-Channel PowerTrench® MOSFET 30V, 156A, 4.1mΩ

Key Features

• RDS(ON)= 5.3 mΩ @ VGS= 10V, ID= 40A

• RDS(ON)= 6.6 mΩ @ VGS= 4.5V, ID= 40A

• High Performance Trench Technology for Extremely Low RDS(ON)

• Low Gate Charge

• High Power and Current Handling Capability

• RoHS Compliant

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON)and fast switching speed.