Discrete Semiconductor Products

TSM10ND60CI

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Taiwan Semiconductor Corporation

600V, 10A, SINGLE N-CHANNEL POW

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Discrete Semiconductor Products

TSM10ND60CI

Active

Taiwan Semiconductor Corporation

600V, 10A, SINGLE N-CHANNEL POW

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	TSM10ND60CI

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1928 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max) [Max]	56.8 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	ITO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.8 V

TSM10 Series

Part	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Package / Case	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Taiwan Semiconductor Corporation TSM10N80CZ C0G	MOSFET (Metal Oxide)	4 V	1.05 Ohm	150 °C	-55 °C	Through Hole	TO-220-3	30 V	10 V	290 W	2336 pF	TO-220	N-Channel	9.5 A	800 V	53 nC
Taiwan Semiconductor Corporation TSM10N80CI C0G	MOSFET (Metal Oxide)	4 V	1.05 Ohm	150 °C	-55 °C	Through Hole	TO-220-3 Full Pack Isolated Tab	30 V	10 V	48 W	2336 pF	ITO-220AB	N-Channel	9.5 A	800 V	53 nC
Taiwan Semiconductor Corporation TSM10NC60CF C0G	MOSFET (Metal Oxide)	4.5 V	750 mOhm	150 °C	-55 °C	Through Hole	TO-220-3 Full Pack	30 V	10 V	45 W		ITO-220S	N-Channel	10 A	600 V		1652 pF
Taiwan Semiconductor Corporation TSM10ND60CI	MOSFET (Metal Oxide)	3.8 V	600 mOhm	150 °C	-55 °C	Through Hole	TO-220-3 Full Pack Isolated Tab	30 V	10 V			ITO-220	N-Channel	10 A	600 V		1928 pF	56.8 W	38 nC
Taiwan Semiconductor Corporation TSM10ND65CI	MOSFET (Metal Oxide)	3.8 V	800 mOhm	150 °C	-55 °C	Through Hole	TO-220-3 Full Pack Isolated Tab	30 V	10 V			ITO-220	N-Channel	10 A	650 V	39.6 nC		56.8 W
Taiwan Semiconductor Corporation TSM10NC65CF C0G	MOSFET (Metal Oxide)	4.5 V	900 mOhm	150 °C	-55 °C	Through Hole	TO-220-3 Full Pack	30 V	10 V	45 W	1650 pF	ITO-220S	N-Channel	10 A	650 V				34 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.02
	Tube	4000	$ 2.10

Description

General part information

TSM10 Series

N-Channel 600 V 10A (Tc) 56.8W (Tc) Through Hole ITO-220

Documents

Technical documentation and resources

No documents available