TSM10 Series

Manufacturer: Taiwan Semiconductor Corporation

Catalog

MOSFET N-CH 800V 9.5A TO220

Part	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Package / Case	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Taiwan Semiconductor Corporation TSM10N80CZ C0G	MOSFET (Metal Oxide)	4 V	1.05 Ohm	150 °C	-55 °C	Through Hole	TO-220-3	30 V	10 V	290 W	2336 pF	TO-220	N-Channel	9.5 A	800 V	53 nC
Taiwan Semiconductor Corporation TSM10N80CI C0G	MOSFET (Metal Oxide)	4 V	1.05 Ohm	150 °C	-55 °C	Through Hole	TO-220-3 Full Pack Isolated Tab	30 V	10 V	48 W	2336 pF	ITO-220AB	N-Channel	9.5 A	800 V	53 nC
Taiwan Semiconductor Corporation TSM10NC60CF C0G	MOSFET (Metal Oxide)	4.5 V	750 mOhm	150 °C	-55 °C	Through Hole	TO-220-3 Full Pack	30 V	10 V	45 W		ITO-220S	N-Channel	10 A	600 V		1652 pF
Taiwan Semiconductor Corporation TSM10ND60CI	MOSFET (Metal Oxide)	3.8 V	600 mOhm	150 °C	-55 °C	Through Hole	TO-220-3 Full Pack Isolated Tab	30 V	10 V			ITO-220	N-Channel	10 A	600 V		1928 pF	56.8 W	38 nC
Taiwan Semiconductor Corporation TSM10ND65CI	MOSFET (Metal Oxide)	3.8 V	800 mOhm	150 °C	-55 °C	Through Hole	TO-220-3 Full Pack Isolated Tab	30 V	10 V			ITO-220	N-Channel	10 A	650 V	39.6 nC		56.8 W
Taiwan Semiconductor Corporation TSM10NC65CF C0G	MOSFET (Metal Oxide)	4.5 V	900 mOhm	150 °C	-55 °C	Through Hole	TO-220-3 Full Pack	30 V	10 V	45 W	1650 pF	ITO-220S	N-Channel	10 A	650 V				34 nC