Discrete Semiconductor Products
TSM10ND65CI
ActiveTaiwan Semiconductor Corporation
650V, 10A, SINGLE N-CHANNEL POW
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Discrete Semiconductor Products
TSM10ND65CI
ActiveTaiwan Semiconductor Corporation
650V, 10A, SINGLE N-CHANNEL POW
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | TSM10ND65CI |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 39.6 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Power Dissipation (Max) [Max] | 56.8 W |
| Rds On (Max) @ Id, Vgs | 800 mOhm |
| Supplier Device Package | ITO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 3.8 V |
| Part | Technology | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Package / Case | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | FET Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Taiwan Semiconductor Corporation | MOSFET (Metal Oxide) | 4 V | 1.05 Ohm | 150 °C | -55 °C | Through Hole | TO-220-3 | 30 V | 10 V | 290 W | 2336 pF | TO-220 | N-Channel | 9.5 A | 800 V | 53 nC | |||
 Taiwan Semiconductor Corporation | MOSFET (Metal Oxide) | 4 V | 1.05 Ohm | 150 °C | -55 °C | Through Hole | TO-220-3 Full Pack Isolated Tab | 30 V | 10 V | 48 W | 2336 pF | ITO-220AB | N-Channel | 9.5 A | 800 V | 53 nC | |||
Taiwan Semiconductor Corporation | MOSFET (Metal Oxide) | 4.5 V | 750 mOhm | 150 °C | -55 °C | Through Hole | TO-220-3 Full Pack | 30 V | 10 V | 45 W | ITO-220S | N-Channel | 10 A | 600 V | 1652 pF | ||||
 Taiwan Semiconductor Corporation | MOSFET (Metal Oxide) | 3.8 V | 600 mOhm | 150 °C | -55 °C | Through Hole | TO-220-3 Full Pack Isolated Tab | 30 V | 10 V | ITO-220 | N-Channel | 10 A | 600 V | 1928 pF | 56.8 W | 38 nC | |||
Taiwan Semiconductor Corporation | MOSFET (Metal Oxide) | 3.8 V | 800 mOhm | 150 °C | -55 °C | Through Hole | TO-220-3 Full Pack Isolated Tab | 30 V | 10 V | ITO-220 | N-Channel | 10 A | 650 V | 39.6 nC | 56.8 W | ||||
Taiwan Semiconductor Corporation | MOSFET (Metal Oxide) | 4.5 V | 900 mOhm | 150 °C | -55 °C | Through Hole | TO-220-3 Full Pack | 30 V | 10 V | 45 W | 1650 pF | ITO-220S | N-Channel | 10 A | 650 V | 34 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 2.02 | |
| Tube | 4000 | $ 2.02 | ||
Description
General part information
TSM10 Series
N-Channel 650 V 10A (Tc) 56.8W (Tc) Through Hole ITO-220
Documents
Technical documentation and resources
No documents available