Deep-Dive with AI
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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | H11F2 |
|---|---|
| Current - DC Forward (If) (Max) [Max] | 60 mA |
| Input Type | DC |
| Mounting Type | Through Hole |
| Number of Channels | 1 |
| Operating Temperature [Max] | 100 °C |
| Operating Temperature [Min] | -55 °C |
| Output Type | MOSFET |
| Package / Case | 6-DIP |
| Package / Case | 0.3 in |
| Package / Case | 7.62 mm |
| Supplier Device Package | 6-DIP |
| Voltage - Forward (Vf) (Typ) | 1.3 V |
| Voltage - Isolation | 5300 Vrms |
| Voltage - Output (Max) [Max] | 30 V |
H11F3M Series
6-Pin DIP Bilateral Analog FET Output Optocoupler
| Part | Output Type | Voltage - Forward (Vf) (Typ) | Voltage - Isolation | Mounting Type | Number of Channels | Voltage - Output (Max) [Max] | Input Type | Package / Case | Package / Case | Package / Case | Turn On / Turn Off Time (Typ) | Turn On / Turn Off Time (Typ) [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Current - DC Forward (If) (Max) [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | MOSFET | 1.3 V | 4170 Vrms | Through Hole | 1 | 30 V | DC | 6-DIP | 0.3 in | 7.62 mm | 45 µs | 45 µs | 100 °C | -40 °C | 6-DIP | 60 mA | |
ON Semiconductor | MOSFET | 1.3 V | 5300 Vrms | Through Hole | 1 | 30 V | DC | 6-DIP | 0.3 in | 7.62 mm | 100 °C | -55 °C | 6-DIP | 60 mA | |||
 ON Semiconductor | MOSFET | 1.3 V | 5300 Vrms | Surface Mount | 1 | DC | 6-SMD Gull Wing | 100 °C | -55 °C | 6-SMD | 60 mA | ||||||
 ON Semiconductor | MOSFET | 1.3 V | 4170 Vrms | Surface Mount | 1 | DC | 6-SMD Gull Wing | 45 µs | 45 µs | 100 °C | -40 °C | 6-SMD | 60 mA | ||||
 ON Semiconductor | MOSFET | 1.3 V | 4170 Vrms | Surface Mount | 1 | DC | 6-SMD Gull Wing | 45 µs | 45 µs | 100 °C | -40 °C | 6-SMD | 60 mA | ||||
 ON Semiconductor | MOSFET | 1.3 V | 4170 Vrms | Through Hole | 1 | 30 V | DC | 6-DIP | 10.16 mm | 45 µs | 45 µs | 100 °C | -40 °C | 6-DIP | 60 mA | 10.16 mm | |
ON Semiconductor | MOSFET | 1.3 V | 5300 Vrms | Through Hole | 1 | 30 V | DC | 6-DIP | 0.3 in | 7.62 mm | 100 °C | -55 °C | 6-DIP | 60 mA | |||
ON Semiconductor | MOSFET | 1.3 V | 5300 Vrms | Through Hole | 1 | 30 V | DC | 6-DIP | 0.3 in | 7.62 mm | 100 °C | -55 °C | 6-DIP | 60 mA | |||
ON Semiconductor | MOSFET | 1.3 V | 4170 Vrms | Surface Mount | 1 | DC | 6-SMD Gull Wing | 45 µs | 45 µs | 100 °C | -40 °C | 6-SMD | 60 mA | ||||
 ON Semiconductor | MOSFET | 1.3 V | 5300 Vrms | Through Hole | 1 | 30 V | DC | 6-DIP | 10.16 mm | 100 °C | -55 °C | 6-DIP | 60 mA | 10.16 mm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 207 | $ 1.46 | |
| 207 | $ 1.46 | |||
Description
General part information
H11F3M Series
The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.
Documents
Technical documentation and resources