Isolators

H11F2300W

Obsolete

ON Semiconductor

OPTOISOLTR 5.3KV PHOTO FET 6-DIP

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Isolators

H11F2300W

Obsolete

ON Semiconductor

OPTOISOLTR 5.3KV PHOTO FET 6-DIP

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	H11F2300W

Current - DC Forward (If) (Max) [Max]	60 mA
Input Type	DC
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-55 °C
Output Type	MOSFET
Package / Case	6-DIP
Package / Case	10.16 mm
Package / Case	10.16 mm
Supplier Device Package	6-DIP
Voltage - Forward (Vf) (Typ)	1.3 V
Voltage - Isolation	5300 Vrms
Voltage - Output (Max) [Max]	30 V

H11F3M Series

6-Pin DIP Bilateral Analog FET Output Optocoupler

Part	Output Type	Voltage - Forward (Vf) (Typ)	Voltage - Isolation	Mounting Type	Number of Channels	Voltage - Output (Max) [Max]	Input Type	Package / Case	Package / Case	Package / Case	Turn On / Turn Off Time (Typ)	Turn On / Turn Off Time (Typ) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Current - DC Forward (If) (Max) [Max]	Package / Case
ON Semiconductor H11F2M	MOSFET	1.3 V	4170 Vrms	Through Hole	1	30 V	DC	6-DIP	0.3 in	7.62 mm	45 µs	45 µs	100 °C	-40 °C	6-DIP	60 mA
ON Semiconductor H11F2	MOSFET	1.3 V	5300 Vrms	Through Hole	1	30 V	DC	6-DIP	0.3 in	7.62 mm			100 °C	-55 °C	6-DIP	60 mA
ON Semiconductor H11F33S	MOSFET	1.3 V	5300 Vrms	Surface Mount	1		DC	6-SMD Gull Wing					100 °C	-55 °C	6-SMD	60 mA
ON Semiconductor H11F3SR2M	MOSFET	1.3 V	4170 Vrms	Surface Mount	1		DC	6-SMD Gull Wing			45 µs	45 µs	100 °C	-40 °C	6-SMD	60 mA
ON Semiconductor H11F3SM	MOSFET	1.3 V	4170 Vrms	Surface Mount	1		DC	6-SMD Gull Wing			45 µs	45 µs	100 °C	-40 °C	6-SMD	60 mA
ON Semiconductor H11F1TVM	MOSFET	1.3 V	4170 Vrms	Through Hole	1	30 V	DC	6-DIP		10.16 mm	45 µs	45 µs	100 °C	-40 °C	6-DIP	60 mA	10.16 mm
ON Semiconductor H11F1	MOSFET	1.3 V	5300 Vrms	Through Hole	1	30 V	DC	6-DIP	0.3 in	7.62 mm			100 °C	-55 °C	6-DIP	60 mA
ON Semiconductor H11F2	MOSFET	1.3 V	5300 Vrms	Through Hole	1	30 V	DC	6-DIP	0.3 in	7.62 mm			100 °C	-55 °C	6-DIP	60 mA
ON Semiconductor H11F3SR2VM	MOSFET	1.3 V	4170 Vrms	Surface Mount	1		DC	6-SMD Gull Wing			45 µs	45 µs	100 °C	-40 °C	6-SMD	60 mA
ON Semiconductor H11F2300W	MOSFET	1.3 V	5300 Vrms	Through Hole	1	30 V	DC	6-DIP		10.16 mm			100 °C	-55 °C	6-DIP	60 mA	10.16 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

H11F3M Series

The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.

Documents

Technical documentation and resources