H11F3M Series

6-Pin DIP Bilateral Analog FET Output Optocoupler

Catalog

6-Pin DIP Bilateral Analog FET Output Optocoupler

Part	Output Type	Voltage - Forward (Vf) (Typ)	Voltage - Isolation	Mounting Type	Number of Channels	Voltage - Output (Max) [Max]	Input Type	Package / Case	Package / Case	Package / Case	Turn On / Turn Off Time (Typ)	Turn On / Turn Off Time (Typ) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Current - DC Forward (If) (Max) [Max]	Package / Case
ON Semiconductor H11F2M	MOSFET	1.3 V	4170 Vrms	Through Hole	1	30 V	DC	6-DIP	0.3 in	7.62 mm	45 µs	45 µs	100 °C	-40 °C	6-DIP	60 mA
ON Semiconductor H11F2	MOSFET	1.3 V	5300 Vrms	Through Hole	1	30 V	DC	6-DIP	0.3 in	7.62 mm			100 °C	-55 °C	6-DIP	60 mA
ON Semiconductor H11F33S	MOSFET	1.3 V	5300 Vrms	Surface Mount	1		DC	6-SMD Gull Wing					100 °C	-55 °C	6-SMD	60 mA
ON Semiconductor H11F3SR2M	MOSFET	1.3 V	4170 Vrms	Surface Mount	1		DC	6-SMD Gull Wing			45 µs	45 µs	100 °C	-40 °C	6-SMD	60 mA
ON Semiconductor H11F3SM	MOSFET	1.3 V	4170 Vrms	Surface Mount	1		DC	6-SMD Gull Wing			45 µs	45 µs	100 °C	-40 °C	6-SMD	60 mA
ON Semiconductor H11F1TVM	MOSFET	1.3 V	4170 Vrms	Through Hole	1	30 V	DC	6-DIP		10.16 mm	45 µs	45 µs	100 °C	-40 °C	6-DIP	60 mA	10.16 mm
ON Semiconductor H11F1	MOSFET	1.3 V	5300 Vrms	Through Hole	1	30 V	DC	6-DIP	0.3 in	7.62 mm			100 °C	-55 °C	6-DIP	60 mA
ON Semiconductor H11F2	MOSFET	1.3 V	5300 Vrms	Through Hole	1	30 V	DC	6-DIP	0.3 in	7.62 mm			100 °C	-55 °C	6-DIP	60 mA
ON Semiconductor H11F3SR2VM	MOSFET	1.3 V	4170 Vrms	Surface Mount	1		DC	6-SMD Gull Wing			45 µs	45 µs	100 °C	-40 °C	6-SMD	60 mA
ON Semiconductor H11F2300W	MOSFET	1.3 V	5300 Vrms	Through Hole	1	30 V	DC	6-DIP		10.16 mm			100 °C	-55 °C	6-DIP	60 mA	10.16 mm

Catalog

6-Pin DIP Bilateral Analog FET Output Optocoupler

Key Features

• As a remote variable resistor:

• ≤ 100Ω to ≥ 300MΩ

• ≤ 15pF shunt capacitance

• ≥ 100GΩ I/O isolation resistanceAs an analog switch:

• Extremely low offset voltage

• 60 Vpk-pksignal capability

• No charge injection or latch-up

• UL recognized (File #E90700)

Description

The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.