JAN2N1890S
ActiveNPN SILICON LOW-POWER 30V TO 60V, 0.5A
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JAN2N1890S
ActiveNPN SILICON LOW-POWER 30V TO 60V, 0.5A
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | JAN2N1890S |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 0.01 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Power - Max [Max] | 800 mW |
| Qualification | MIL-PRF-19500/225 |
| Supplier Device Package | TO-39 (TO-205AD) |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 121.35 | |
Description
General part information
JAN2N1890S-Transistor Series
This specification covers the performance requirements for NPN, silicon, low-power, 2N1711 and 2N1890 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/225. The device packages for the encapsulated device types are as follows: (2N1711 and 2N1890) Three terminal round metal can TO-205AD (formerly TO-39) and TO-205-AA (formerly TO-5).
Documents
Technical documentation and resources