JAN2N1890S-Transistor Series

NPN Silicon Low-Power 30V to 60V, 0.5A

Catalog

NPN Silicon Low-Power 30V to 60V, 0.5A

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Grade	Package / Case	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Transistor Type	Qualification
Microchip Technology JAN2N1890S	100	500 mA	Through Hole	5 V	80 V	Military	TO-205AD TO-39-3 Metal Can	800 mW	0.01 µA	TO-39 (TO-205AD)	NPN	MIL-PRF-19500/225

Catalog

NPN Silicon Low-Power 30V to 60V, 0.5A

Key Features

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Description

This specification covers the performance requirements for NPN, silicon, low-power, 2N1711 and 2N1890 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/225. The device packages for the encapsulated device types are as follows: (2N1711 and 2N1890) Three terminal round metal can TO-205AD (formerly TO-39) and TO-205-AA (formerly TO-5).