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Integrated Circuits (ICs)

OPA659IDRBT

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Texas Instruments

650MHZ UNITY GAIN STABLE JFET INPUT AMPLIFIER

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VSON (DRB)
Integrated Circuits (ICs)

OPA659IDRBT

Active
Texas Instruments

650MHZ UNITY GAIN STABLE JFET INPUT AMPLIFIER

Technical Specifications

Parameters and characteristics for this part

SpecificationOPA659IDRBT
-3db Bandwidth650 MHz
Amplifier TypeJ-FET
Current - Input Bias10 pA
Current - Output / Channel [custom]70 mA
Current - Supply32 mA
Gain Bandwidth Product350 MHz
Mounting TypeSurface Mount
Number of Circuits1
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case8-VDFN Exposed Pad
Slew Rate2550 V/µs
Supplier Device Package8-SON (3x3)
Voltage - Input Offset1 mV
Voltage - Supply Span (Max) [Max]13 V
Voltage - Supply Span (Min) [Min]7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 8.61
10$ 7.78
25$ 7.42
100$ 6.44
Digi-Reel® 1$ 8.61
10$ 7.78
25$ 7.42
100$ 6.44
Tape & Reel (TR) 250$ 6.15
500$ 5.61
1250$ 4.88
Texas InstrumentsSMALL T&R 1$ 7.58
100$ 6.18
250$ 4.86
1000$ 4.12

Description

General part information

OPA659 Series

The OPA659 combines a very wideband, unity-gain stable, voltage-feedback operational amplifier with a JFET-input stage to offer an ultra-high dynamic range amplifier for high impedance buffering in data acquisition applications such as oscilloscope front-end amplifiers and machine vision applications such as photodiode transimpedance amplifiers used in wafer inspection.

The wide 650-MHz unity-gain bandwidth is complemented by a very high 2550-V/µs slew rate.

The high input impedance and low bias current provided by the JFET input are supported by the low 8.9-nV/&radic:Hzinput voltage noise to achieve a very low integrated noise in wideband photodiode transimpedance applications.