OPA659 Series

650MHz unity gain stable JFET input amplifier

Catalog

650MHz unity gain stable JFET input amplifier

Part	Voltage - Input Offset	-3db Bandwidth	Current - Input Bias	Amplifier Type	Voltage - Supply Span (Max) [Max]	Supplier Device Package	Gain Bandwidth Product	Current - Supply	Number of Circuits	Mounting Type	Voltage - Supply Span (Min) [Min]	Slew Rate	Package / Case	Current - Output / Channel [custom]	Operating Temperature [Max]	Operating Temperature [Min]	Supplied Contents	Channels per IC	Current - Supply (Main IC)	Board Type	Utilized IC / Part	Voltage - Supply, Single/Dual (±) [Max]	Voltage - Supply, Single/Dual (±) [Min]
Texas Instruments OPA659IDBVT	1 mV	650 MHz	10 pA	J-FET	13 V	SOT-23-5	350 MHz	32 mA	1	Surface Mount	7 V	2550 V/µs	SC-74A SOT-753	70 mA	85 °C	-40 °C
Texas Instruments OPA659EVM		650 MHz		J-FET								2550 V/µs		70 mA			Board(s)	1 - Single	32 mA	Fully Populated	OPA659	3.5 V 6.5 V	-3.5 V
Texas Instruments OPA659IDRBT	1 mV	650 MHz	10 pA	J-FET	13 V	8-SON (3x3)	350 MHz	32 mA	1	Surface Mount	7 V	2550 V/µs	8-VDFN Exposed Pad	70 mA	85 °C	-40 °C

Catalog

650MHz unity gain stable JFET input amplifier

Key Features

• High Bandwidth: 650 MHz (G = 1 V/V)High Slew Rate: 2550 V/µs (4-V Step)Excellent THD: –78 dBc at 10 MHzLow Input Voltage Noise: 8.9 nV/√HzFast Overdrive Recovery: 8 nsFast Settling time (1% 4-V Step): 8 nsLow Input Offset Voltage: ±1 mVLow Input Bias Current: ±10 pAHigh Output Current: 70 mAHigh Bandwidth: 650 MHz (G = 1 V/V)High Slew Rate: 2550 V/µs (4-V Step)Excellent THD: –78 dBc at 10 MHzLow Input Voltage Noise: 8.9 nV/√HzFast Overdrive Recovery: 8 nsFast Settling time (1% 4-V Step): 8 nsLow Input Offset Voltage: ±1 mVLow Input Bias Current: ±10 pAHigh Output Current: 70 mA

Description

The OPA659 combines a very wideband, unity-gain stable, voltage-feedback operational amplifier with a JFET-input stage to offer an ultra-high dynamic range amplifier for high impedance buffering in data acquisition applications such as oscilloscope front-end amplifiers and machine vision applications such as photodiode transimpedance amplifiers used in wafer inspection. The wide 650-MHz unity-gain bandwidth is complemented by a very high 2550-V/µs slew rate. The high input impedance and low bias current provided by the JFET input are supported by the low 8.9-nV/&radic:Hzinput voltage noise to achieve a very low integrated noise in wideband photodiode transimpedance applications. Broad transimpedance bandwidths are possible with the high 350-MHz gain bandwidth product of this device. Where lower speed with lower quiescent current is required, consider the OPA656. Where unity-gain stability is not required, consider the OPA657. The OPA659 combines a very wideband, unity-gain stable, voltage-feedback operational amplifier with a JFET-input stage to offer an ultra-high dynamic range amplifier for high impedance buffering in data acquisition applications such as oscilloscope front-end amplifiers and machine vision applications such as photodiode transimpedance amplifiers used in wafer inspection. The wide 650-MHz unity-gain bandwidth is complemented by a very high 2550-V/µs slew rate. The high input impedance and low bias current provided by the JFET input are supported by the low 8.9-nV/&radic:Hzinput voltage noise to achieve a very low integrated noise in wideband photodiode transimpedance applications. Broad transimpedance bandwidths are possible with the high 350-MHz gain bandwidth product of this device. Where lower speed with lower quiescent current is required, consider the OPA656. Where unity-gain stability is not required, consider the OPA657.