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OPA659EVM

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Texas Instruments

EVAL MODULE FOR OPA659

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Development Boards, Kits, Programmers

OPA659EVM

Active

Texas Instruments

EVAL MODULE FOR OPA659

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	OPA659EVM

-3db Bandwidth	650 MHz
Amplifier Type	J-FET
Board Type	Fully Populated
Channels per IC	1 - Single
Current - Output / Channel [custom]	70 mA
Current - Supply (Main IC)	32 mA
Slew Rate	2550 V/µs
Supplied Contents	Board(s)
Utilized IC / Part	OPA659
Voltage - Supply, Single/Dual (±) [Max]	6.5 V, 3.5 V
Voltage - Supply, Single/Dual (±) [Min]	-3.5 V

OPA659 Series

650MHz unity gain stable JFET input amplifier

Part	Voltage - Input Offset	-3db Bandwidth	Current - Input Bias	Amplifier Type	Voltage - Supply Span (Max) [Max]	Supplier Device Package	Gain Bandwidth Product	Current - Supply	Number of Circuits	Mounting Type	Voltage - Supply Span (Min) [Min]	Slew Rate	Package / Case	Current - Output / Channel [custom]	Operating Temperature [Max]	Operating Temperature [Min]	Supplied Contents	Channels per IC	Current - Supply (Main IC)	Board Type	Utilized IC / Part	Voltage - Supply, Single/Dual (±) [Max]	Voltage - Supply, Single/Dual (±) [Min]
Texas Instruments OPA659IDBVT	1 mV	650 MHz	10 pA	J-FET	13 V	SOT-23-5	350 MHz	32 mA	1	Surface Mount	7 V	2550 V/µs	SC-74A SOT-753	70 mA	85 °C	-40 °C
Texas Instruments OPA659EVM		650 MHz		J-FET								2550 V/µs		70 mA			Board(s)	1 - Single	32 mA	Fully Populated	OPA659	3.5 V 6.5 V	-3.5 V
Texas Instruments OPA659IDRBT	1 mV	650 MHz	10 pA	J-FET	13 V	8-SON (3x3)	350 MHz	32 mA	1	Surface Mount	7 V	2550 V/µs	8-VDFN Exposed Pad	70 mA	85 °C	-40 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Box	1	$ 58.80

Description

General part information

OPA659 Series

The OPA659 combines a very wideband, unity-gain stable, voltage-feedback operational amplifier with a JFET-input stage to offer an ultra-high dynamic range amplifier for high impedance buffering in data acquisition applications such as oscilloscope front-end amplifiers and machine vision applications such as photodiode transimpedance amplifiers used in wafer inspection.

The wide 650-MHz unity-gain bandwidth is complemented by a very high 2550-V/µs slew rate.

The high input impedance and low bias current provided by the JFET input are supported by the low 8.9-nV/&radic:Hzinput voltage noise to achieve a very low integrated noise in wideband photodiode transimpedance applications.

Documents

Technical documentation and resources

No documents available