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SOT 23-3
Discrete Semiconductor Products

FDN337N-F169

Obsolete
ON Semiconductor

N-CHANNEL LOGIC-LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 30V, 2.2A, 65MΩ

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SOT 23-3
Discrete Semiconductor Products

FDN337N-F169

Obsolete
ON Semiconductor

N-CHANNEL LOGIC-LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 30V, 2.2A, 65MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDN337N-F169
Current - Continuous Drain (Id) @ 25°C2.2 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 2.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]300 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]500 mW
Rds On (Max) @ Id, Vgs65 mOhm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

FDN337N Series

SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.