
FDN337N-F169
ObsoleteN-CHANNEL LOGIC-LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 30V, 2.2A, 65MΩ
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FDN337N-F169
ObsoleteN-CHANNEL LOGIC-LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 30V, 2.2A, 65MΩ
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDN337N-F169 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.2 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 2.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) [Max] | 500 mW |
| Rds On (Max) @ Id, Vgs | 65 mOhm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
FDN337N Series
SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Documents
Technical documentation and resources