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DIODES INC. DDTC144EE-7-F
Discrete Semiconductor Products

FDN337N

Active
ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 2.2 A, 30 V, 0.054 OHM, 4.5 V, 700 MV ROHS COMPLIANT: YES

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DIODES INC. DDTC144EE-7-F
Discrete Semiconductor Products

FDN337N

Active
ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 2.2 A, 30 V, 0.054 OHM, 4.5 V, 700 MV ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationFDN337N
Current - Continuous Drain (Id) @ 25°C2.2 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 2.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]300 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]500 mW
Rds On (Max) @ Id, Vgs65 mOhm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.82
10$ 0.51
100$ 0.33
500$ 0.25
1000$ 0.23
Digi-Reel® 1$ 0.82
10$ 0.51
100$ 0.33
500$ 0.25
1000$ 0.23
Tape & Reel (TR) 3000$ 0.20
6000$ 0.18
9000$ 0.17
15000$ 0.16
21000$ 0.16
NewarkEach (Supplied on Full Reel) 3000$ 0.18
6000$ 0.18
12000$ 0.17
18000$ 0.16
ON SemiconductorN/A 1$ 0.15

Description

General part information

FDN337N Series

SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.