Zenode.ai Logo
Beta
No image
Discrete Semiconductor Products

JANTXV2N3791

Active
Microchip Technology

PNP SILICON HIGH-POWER -60V TO -80V, -10A

Deep-Dive with AI

Search across all available documentation for this part.

Documents2N3791 2N3782
Discrete Semiconductor Products

JANTXV2N3791

Active
Microchip Technology

PNP SILICON HIGH-POWER -60V TO -80V, -10A

Deep-Dive with AI

Documents2N3791 2N3782

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV2N3791
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]30 hFE
GradeMilitary
Mounting TypeThrough Hole
Package / CaseTO-3
Power - Max [Max]5 W
QualificationMIL-PRF-19500/379
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic [Max]2.5 V
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 50$ 72.11
Microchip DirectN/A 1$ 72.11
NewarkEach 1$ 72.11
100$ 66.96
500$ 64.39

Description

General part information

JANTXV2N3791-Transistor Series

This specification covers the performance requirements for power PNP silicon 2N3791 and 2N3792 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/379. The device packages for the encapsulated device types are similar to TO-3.

Documents

Technical documentation and resources