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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N3791 |
|---|---|
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 30 hFE |
| Mounting Type | Through Hole |
| Package / Case | TO-3 |
| Power - Max [Max] | 5 W |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic [Max] | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 41.38 | |
| Microchip Direct | N/A | 1 | $ 44.55 | |
| Newark | Each | 100 | $ 41.37 | |
| 500 | $ 39.78 | |||
Description
General part information
JANTXV2N3791-Transistor Series
This specification covers the performance requirements for power PNP silicon 2N3791 and 2N3792 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/379. The device packages for the encapsulated device types are similar to TO-3.
Documents
Technical documentation and resources
