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ONSEMI FDMS8320L
Discrete Semiconductor Products

NTMFS08N003C

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ON Semiconductor

N‐CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 80V, 147A, 3.1MΩ

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ONSEMI FDMS8320L
Discrete Semiconductor Products

NTMFS08N003C

Active
ON Semiconductor

N‐CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 80V, 147A, 3.1MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationNTMFS08N003C
Current - Continuous Drain (Id) @ 25°C22 A, 147 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [x]73 nC
Input Capacitance (Ciss) (Max) @ Vds5350 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.7 W, 125 W
Rds On (Max) @ Id, Vgs3.1 mOhm
Supplier Device PackagePower56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 8.39
10$ 7.19
100$ 5.99
500$ 5.29
1000$ 4.76
Digi-Reel® 1$ 8.39
10$ 7.19
100$ 5.99
500$ 5.29
1000$ 4.76
Tape & Reel (TR) 3000$ 4.36
NewarkEach (Supplied on Cut Tape) 1$ 7.39
10$ 5.91
25$ 5.86
50$ 5.38
100$ 4.91
250$ 4.72
500$ 4.54
ON SemiconductorN/A 1$ 4.01

Description

General part information

NTMFS08N003C Series

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.