Specification	NTMFS08N004C

Current - Continuous Drain (Id) @ 25°C	126 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds	4250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	Power56, 8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTMFS08N003C Series

N‐Channel Shielded Gate PowerTrench® MOSFET 80V, 147A, 3.1mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Package / Case	Mounting Type	Technology	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [x]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id
ON Semiconductor NTMFS08N003C	5350 pF	22 A 147 A	-55 °C	150 °C	2.7 W 125 W	8-PowerTDFN	Surface Mount	MOSFET (Metal Oxide)	80 V	N-Channel	20 V	73 nC	Power56	6 V 10 V	4 V	3.1 mOhm
ON Semiconductor NTMFS08N004C	4250 pF	126 A	-55 °C	150 °C	125 W	8-PowerTDFN	Surface Mount	MOSFET (Metal Oxide)	80 V	N-Channel	20 V		8-PQFN (5x6) Power56	6 V 10 V		4 mOhm	55 nC	4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.52
		10	$ 3.80
		100	$ 3.07
		500	$ 2.73
		1000	$ 2.34
	Digi-Reel®	1	$ 4.52
		10	$ 3.80
		100	$ 3.07
		500	$ 2.73
		1000	$ 2.34
	Tape & Reel (TR)	3000	$ 2.20
Newark	Each (Supplied on Cut Tape)	1	$ 5.29
		10	$ 3.62
		25	$ 3.30
		50	$ 2.96
ON Semiconductor	N/A	1	$ 1.94

Description

General part information

NTMFS08N003C Series

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.