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Microchip Technology-JANTX2N2481 GP BJT Trans GP BJT NPN 15V 360mW 3-Pin TO-18 Bag
Discrete Semiconductor Products

JANTX2N2484

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Microchip Technology

TRANS GP BJT NPN 60V 0.05A 360MW 3-PIN TO-18

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Search across all available documentation for this part.

Documents2N2484
Microchip Technology-JANTX2N2481 GP BJT Trans GP BJT NPN 15V 360mW 3-Pin TO-18 Bag
Discrete Semiconductor Products

JANTX2N2484

Active
Microchip Technology

TRANS GP BJT NPN 60V 0.05A 360MW 3-PIN TO-18

Deep-Dive with AI

Documents2N2484

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N2484
Current - Collector (Ic) (Max) [Max]50 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]225
GradeMilitary
Mounting TypeThrough Hole
Package / CaseTO-18-3 Metal Can, TO-206AA
Power - Max [Max]360 mW
QualificationMIL-PRF-19500/376
Supplier Device PackageTO-18
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 8.39
DigikeyBulk 1$ 9.33
100$ 8.67
Microchip DirectN/A 1$ 9.34

Description

General part information

JANTXV2N2484UA-Transistor Series

This specification covers the performance requirements for NPN, silicon, low-power 2N2484 transistor. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/376. Two levels of product assurance (JANHC, JANKC) are provided for die. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Documents

Technical documentation and resources