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ONSEMI FDMC8622
Discrete Semiconductor Products

FDMC86102LZ

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 100 V, 22 A, 24 MILLIOHMS, POWER 33, 8 PINS, SURFACE MOUNT

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ONSEMI FDMC8622
Discrete Semiconductor Products

FDMC86102LZ

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 100 V, 22 A, 24 MILLIOHMS, POWER 33, 8 PINS, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMC86102LZ
Current - Continuous Drain (Id) @ 25°C18 A, 7 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]22 nC
Input Capacitance (Ciss) (Max) @ Vds1290 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max)2.3 W, 41 W
Rds On (Max) @ Id, Vgs24 mOhm
Supplier Device Package8-MLP (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.48
10$ 1.60
100$ 1.10
500$ 0.88
1000$ 0.81
Digi-Reel® 1$ 2.48
10$ 1.60
100$ 1.10
500$ 0.88
1000$ 0.81
Tape & Reel (TR) 3000$ 0.73
NewarkEach (Supplied on Full Reel) 3000$ 0.82
ON SemiconductorN/A 1$ 0.67

Description

General part information

FDMC86102LZ Series

This N-Channel logic Level MOSFETs are produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.