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FDMC2610
Discrete Semiconductor Products

FDMC86102L

Active
ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 18 A, 100 V, 0.0189 OHM, 10 V, 1.8 V ROHS COMPLIANT: YES

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FDMC2610
Discrete Semiconductor Products

FDMC86102L

Active
ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 18 A, 100 V, 0.0189 OHM, 10 V, 1.8 V ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMC86102L
Current - Continuous Drain (Id) @ 25°C18 A, 7 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]22 nC
Input Capacitance (Ciss) (Max) @ Vds1330 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max)2.3 W, 41 W
Rds On (Max) @ Id, Vgs23 mOhm
Supplier Device Package8-MLP (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.08
10$ 1.33
100$ 0.90
500$ 0.72
1000$ 0.66
Digi-Reel® 1$ 2.08
10$ 1.33
100$ 0.90
500$ 0.72
1000$ 0.66
Tape & Reel (TR) 3000$ 0.59
6000$ 0.57
NewarkEach (Supplied on Full Reel) 3000$ 0.76
6000$ 0.69
12000$ 0.62
18000$ 0.60
30000$ 0.58
ON SemiconductorN/A 1$ 0.53

Description

General part information

FDMC86102LZ Series

This N-Channel logic Level MOSFETs are produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.