2N6678T1

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POWER BJT TO-254 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

POWER BJT TO-254 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	2N6678T1

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Part	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Transistor Type
Microchip Technology 2N6678	3 W	15 hFE	Through Hole	15 A	1 V	-65 ░C	200 °C	TO-204AA TO-3	400 V	100 µA	NPN
Microchip Technology 2N6678T1

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 292.95
Newark	Each	100	$ 292.95
		500	$ 281.67

General part information

Bipolar (BJT) Transistor

Technical documentation and resources