Discrete Semiconductor Products

2N6678

Active

TRANS GP BJT NPN 400V 15A 6000MW 3-PIN(2+TAB) TO-3 TRAY

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

TRANS GP BJT NPN 400V 15A 6000MW 3-PIN(2+TAB) TO-3 TRAY

Technical Specifications

Parameters and characteristics for this part

Specification	2N6678

Current - Collector (Ic) (Max) [Max]	15 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	15 hFE
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-65 ░C
Package / Case	TO-3, TO-204AA
Power - Max [Max]	3 W
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	400 V

Part	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Transistor Type
Microchip Technology 2N6678	3 W	15 hFE	Through Hole	15 A	1 V	-65 ░C	200 °C	TO-204AA TO-3	400 V	100 µA	NPN
Microchip Technology 2N6678T1

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 111.90
Digikey	Bulk	100	$ 124.60
Newark	Each	100	$ 124.60
		500	$ 119.81

General part information

Bipolar (BJT) Transistor NPN 400 V 15 A 3 W Through Hole TO-204AD (TO-3)

Technical documentation and resources