Discrete Semiconductor Products

APT35GP120B2D2G

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INSULATED GATE BIPOLAR TRANSISTOR, 96A I(C), 1200V V(BR)CES, N-CHANNEL

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DocumentsAPT35GP120BG IGBT PT MOS 7 Single 1200 V 35 A TO-247 Datasheet APT25GP120B IGBT PT MOS 7 Single 1200 V 25 A TO-247 Datasheet +4

Discrete Semiconductor Products

APT35GP120B2D2G

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Microchip Technology

INSULATED GATE BIPOLAR TRANSISTOR, 96A I(C), 1200V V(BR)CES, N-CHANNEL

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DocumentsAPT35GP120BG IGBT PT MOS 7 Single 1200 V 35 A TO-247 Datasheet APT25GP120B IGBT PT MOS 7 Single 1200 V 25 A TO-247 Datasheet +4

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	APT35GP120B2D2G

Current - Collector (Ic) (Max) [Max]	96 A
Current - Collector Pulsed (Icm)	140 A
Gate Charge	150 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power - Max [Max]	540 W
Reverse Recovery Time (trr)	85 ns
Supplier Device Package	T-MAX™ [B2]
Switching Energy	1.185 mJ, 1 mJ
Td (on/off) @ 25°C	99 ns, 14 ns
Test Condition	15 V, 800 V, 5 Ohm, 35 A
Vce(on) (Max) @ Vge, Ic	3.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

IGBT-PT-1200V Series

1200V Punch-Thru IGBT

Part	IGBT Type	Supplier Device Package	Input	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Power - Max [Max]	Configuration	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Input Capacitance (Cies) @ Vce	Gate Charge	Td (on/off) @ 25°C	Switching Energy	Test Condition	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C	Reverse Recovery Time (trr)
Microchip Technology APT45GP120JDQ2	PT	ISOTOP®	Standard	3.9 V	75 A	-55 °C	150 °C	Chassis Mount	ISOTOP	329 W	Single	1200 V	750 µA
Microchip Technology APT45GP120J	PT	ISOTOPÛ	Standard	3.9 V	75 A	-55 °C	150 °C	Chassis Mount	ISOTOP	329 W	Single	1200 V	500 çA	3.94 nF
Microchip Technology APT25GP120BG	PT	TO-247 [B]		3.9 V	69 A	-55 °C	150 °C	Through Hole	TO-247-3	417 W		1200 V			110 nC	12 ns 70 ns	438 µJ 500 µJ	5 Ohm 15 V 25 A 600 V	90 A
Microchip Technology APT75GP120B2G	PT			3.9 V	100 A	-55 °C	150 °C	Through Hole	TO-247-3 Variant	1042 W		1200 V			320 nC		2.5 mJ 1620 µJ	5 Ohm 15 V 75 A 600 V	300 A	20 ns 163 ns
Microchip Technology APT45GP120B2DQ2G	PT			3.9 V	113 A	-55 °C	150 °C	Through Hole	TO-247-3 Variant	625 W		1200 V			185 nC		900 µJ 905 µJ	5 Ohm 15 V 45 A 600 V	170 A	18 ns 100 ns
Microchip Technology APT75GP120JDQ3	PT	ISOTOP®	Standard	3.9 V	128 A	-55 °C	150 °C	Chassis Mount	ISOTOP	543 W	Single	1200 V	1.25 mA	7.04 nF
Microchip Technology APT35GP120B2D2G	PT	T-MAX™ [B2]		3.9 V	96 A	-55 °C	150 °C	Through Hole	TO-247-3 Variant	540 W		1200 V			150 nC		1 mJ 1.185 mJ	5 Ohm 15 V 35 A 800 V	140 A	14 ns 99 ns	85 ns
Microchip Technology APT75GP120J	PT	ISOTOP®	Standard	3.9 V	128 A	-55 °C	150 °C	Chassis Mount	ISOTOP	543 W	Single	1200 V	1 mA	7.04 nF
Microchip Technology APT25GP120BDQ1G	PT	TO-247 [B]		3.9 V	69 A	-55 °C	150 °C	Through Hole	TO-247-3	417 W		1200 V			110 nC	12 ns 70 ns	440 µJ 500 µJ	5 Ohm 15 V 25 A 600 V	90 A
Microchip Technology APT35GP120BG	PT	TO-247 [B]		3.9 V	96 A	-55 °C	150 °C	Through Hole	TO-247-3	543 W		1200 V			150 nC		680 µJ 750 µJ	5 Ohm 15 V 35 A 600 V	140 A	16 ns 94 ns