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T-MAX Pkg
Discrete Semiconductor Products

APT45GP120B2DQ2G

Active
Microchip Technology

TRANS IGBT CHIP N-CH 1200V 113A 625W 3-PIN(3+TAB) T-MAX TUBE

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Search across all available documentation for this part.

DocumentsAPT25GP120BDQ1G 1200 V, 25 A Power MOS 7™ PT IGBT with DQ Diode TO-247 DatasheetAPT25GP120B IGBT PT MOS 7 Single 1200 V 25 A TO-247 Datasheet+4
T-MAX Pkg
Discrete Semiconductor Products

APT45GP120B2DQ2G

Active
Microchip Technology

TRANS IGBT CHIP N-CH 1200V 113A 625W 3-PIN(3+TAB) T-MAX TUBE

Deep-Dive with AI

DocumentsAPT25GP120BDQ1G 1200 V, 25 A Power MOS 7™ PT IGBT with DQ Diode TO-247 DatasheetAPT25GP120B IGBT PT MOS 7 Single 1200 V 25 A TO-247 Datasheet+4

Technical Specifications

Parameters and characteristics for this part

SpecificationAPT45GP120B2DQ2G
Current - Collector (Ic) (Max) [Max]113 A
Current - Collector Pulsed (Icm)170 A
Gate Charge185 nC
IGBT TypePT
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3 Variant
Power - Max [Max]625 W
Switching Energy905 µJ, 900 µJ
Td (on/off) @ 25°C100 ns, 18 ns
Test Condition15 V, 45 A, 600 V, 5 Ohm
Vce(on) (Max) @ Vge, Ic3.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 20.57
100$ 16.69
Microchip DirectTUBE 1$ 20.57
100$ 17.78
250$ 17.09
500$ 16.70
1000$ 16.30
5000$ 15.76

Description

General part information

IGBT-PT-1200V Series

IGBT products from Microchip provide high-quality solutions for a

wide range of high-voltage and high-power applications. The switching frequency

range spans from DC for minimal conduction loss to 150 kHz for