Specification	HGTP7N60A4

Current - Collector (Ic) (Max)	34 A
Current - Collector Pulsed (Icm)	56 A
Gate Charge	37 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Supplier Device Package	TO-220-3
Switching Energy	55 µJ, 60 µJ
Td (on/off) @ 25°C	11 ns
Td (on/off) @ 25°C	100 ns
Test Condition	390 V, 25 Ohm, 15 V, 7 A
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

HGTP7N60A4 Series

IGBT, 600V, SMPS

Part	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max)	Test Condition	Mounting Type	Supplier Device Package	Gate Charge	Operating Temperature [Min]	Operating Temperature [Max]	Switching Energy	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Package / Case	Reverse Recovery Time (trr)	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]
ON Semiconductor HGTP7N60A4	56 A	34 A	7 A 15 V 25 Ohm 390 V	Through Hole	TO-220-3	37 nC	-55 °C	150 °C	55 µJ 60 µJ	600 V	2.7 V	11 ns	100 ns	TO-220-3
ON Semiconductor HGTP7N60A4D	56 A	34 A	7 A 15 V 25 Ohm 390 V	Through Hole	TO-220-3	37 nC	-55 °C	150 °C	55 µJ 60 µJ	600 V	2.7 V	11 ns	100 ns	TO-220-3	34 ns
ON Semiconductor HGTP7N60C3D	56 A		7 A 15 V 50 Ohm 480 V	Through Hole	TO-220-3	23 nC			165 µJ 600 µJ	600 V	2 V			TO-220-3		60 W	14 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

HGTP7N60A4 Series

The HGTP7N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.