HGTP7N60A4 Series

IGBT, 600V, SMPS

Catalog

IGBT, 600V, SMPS

Part	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max)	Test Condition	Mounting Type	Supplier Device Package	Gate Charge	Operating Temperature [Min]	Operating Temperature [Max]	Switching Energy	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Package / Case	Reverse Recovery Time (trr)	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]
ON Semiconductor HGTP7N60A4	56 A	34 A	7 A 15 V 25 Ohm 390 V	Through Hole	TO-220-3	37 nC	-55 °C	150 °C	55 µJ 60 µJ	600 V	2.7 V	11 ns	100 ns	TO-220-3
ON Semiconductor HGTP7N60A4D	56 A	34 A	7 A 15 V 25 Ohm 390 V	Through Hole	TO-220-3	37 nC	-55 °C	150 °C	55 µJ 60 µJ	600 V	2.7 V	11 ns	100 ns	TO-220-3	34 ns
ON Semiconductor HGTP7N60C3D	56 A		7 A 15 V 50 Ohm 480 V	Through Hole	TO-220-3	23 nC			165 µJ 600 µJ	600 V	2 V			TO-220-3		60 W	14 A

Catalog

IGBT, 600V, SMPS

Key Features

• 14A, 600V @ TC= 110°C

• Low Saturation Voltage : VCE(sat)= 1.9 V @ IC= 7A

• Typical Fall Time. . . . . . . . . . 75ns at TJ= 125°C

• Low Conduction Loss

Description

The HGTP7N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.