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TO-220-3
Discrete Semiconductor Products

HGTP7N60C3D

Obsolete
ON Semiconductor

IGBT 600V 14A 60W TO220AB

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DocumentsDatasheet
TO-220-3
Discrete Semiconductor Products

HGTP7N60C3D

Obsolete
ON Semiconductor

IGBT 600V 14A 60W TO220AB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationHGTP7N60C3D
Current - Collector (Ic) (Max) [Max]14 A
Current - Collector Pulsed (Icm)56 A
Gate Charge23 nC
Mounting TypeThrough Hole
Package / CaseTO-220-3
Power - Max [Max]60 W
Supplier Device PackageTO-220-3
Switching Energy600 µJ, 165 µJ
Test Condition15 V, 7 A, 50 Ohm, 480 V
Vce(on) (Max) @ Vge, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

HGTP7N60A4 Series

The HGTP7N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

Documents

Technical documentation and resources