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4-TQFN (1.2x1.2)
Integrated Circuits (ICs)

MIC5019YFT-TR

Active
Microchip Technology

A HIGH OR LOW SIDE SINGLE NON-INV GATE DRVR, QFN-4 4 UDFN 1.2X1.2X0.6MM T/R ROHS COMPLIANT: YES

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4-TQFN (1.2x1.2)
Integrated Circuits (ICs)

MIC5019YFT-TR

Active
Microchip Technology

A HIGH OR LOW SIDE SINGLE NON-INV GATE DRVR, QFN-4 4 UDFN 1.2X1.2X0.6MM T/R ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMIC5019YFT-TR
Channel TypeSingle
Driven ConfigurationHigh-Side
Gate TypeN-Channel MOSFET
Input TypeNon-Inverting
Logic Voltage - VIL, VIH0.8 V, 3 V
Mounting TypeSurface Mount
Number of Drivers1
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-40 °C
Package / Case4-TMLF®, 4-UDFN Exposed Pad
Voltage - Supply [Max]9 V
Voltage - Supply [Min]2.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.01
25$ 0.83
100$ 0.80
Digi-Reel® 1$ 1.01
25$ 0.83
100$ 0.80
Tape & Reel (TR) 5000$ 0.80
Microchip DirectT/R 1$ 1.01
25$ 0.83
100$ 0.76
1000$ 0.73
NewarkEach (Supplied on Full Reel) 1$ 0.78
6000$ 0.78

Description

General part information

MIC5019 Series

The MIC5019 is a high-side MOSFET gate driver with integrated charge pump designed to switch an N-Channel enhancement type MOSFET control signal in high-side or low-side applications.

The MIC5019 operates from a 2.7 V to 9 V supply, and generates gate voltages of 9.2 V from a 3 V supply, and 16 V from a 9 V supply. The device consumes a low 77 µA of supply current and less than 1 µA of supply current in shutdown mode.

In high side configurations, the source voltage of the MOSFET approaches the supply voltage when switched on. To keep the MOSFET turned on, the MIC5019's output drives the MOSFET gate voltage higher than the supply voltage.