MIC5019 Series

Ultra-Small High Side MOSFET Gate Driver with Charge Pump

Catalog

Ultra-Small High Side MOSFET Gate Driver with Charge Pump

Part	Driven Configuration	Number of Drivers	Voltage - Supply [Min]	Voltage - Supply [Max]	Channel Type	Logic Voltage - VIL, VIH	Gate Type	Input Type	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
Microchip Technology MIC5019YFT-T5	High-Side	1	2.7 V	9 V	Single	0.8 V 3 V	N-Channel MOSFET	Non-Inverting	Surface Mount	4-UQFN	-40 °C	125 ¯C
Microchip Technology MIC5019YFT-TR	High-Side	1	2.7 V	9 V	Single	0.8 V 3 V	N-Channel MOSFET	Non-Inverting	Surface Mount	4-TMLF® 4-UDFN Exposed Pad	-40 °C	125 ¯C

Catalog

Ultra-Small High Side MOSFET Gate Driver with Charge Pump

Key Features

- 4-pin 1.2 x 1.2 mm Thin QFN Package

- 2.7 V to 9 V supply voltage range

- 16 V gate drive at VDD = 9 V

- 8 V gate drive at VDD = 2.7 V

- Operates in low and high side configurations

- 150 µA (typical) supply current at VDD = 5 V

- < 1 µA shutdown supply current

- -40°C to +125°C Junction Temperature Range

Description

The MIC5019 is a high-side MOSFET gate driver with integrated charge pump designed to switch an N-Channel enhancement type MOSFET control signal in high-side or low-side applications. The MIC5019 operates from a 2.7 V to 9 V supply, and generates gate voltages of 9.2 V from a 3 V supply, and 16 V from a 9 V supply. The device consumes a low 77 µA of supply current and less than 1 µA of supply current in shutdown mode. In high side configurations, the source voltage of the MOSFET approaches the supply voltage when switched on. To keep the MOSFET turned on, the MIC5019's output drives the MOSFET gate voltage higher than the supply voltage. The MIC5019 is available in an ultra-small 4-pin 1.2 x 1.2 mm Thin QFN Package and is rated for -40°C to +125°C junction temperature range.