Specification	BUL45

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	14
Frequency - Transition	12 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power - Max [Max]	75 W
Supplier Device Package	TO-220
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max)	400 V

BUL45D2 Series

5.0 A, 400 V NPN Bipolar Power Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Current - Collector (Ic) (Max)	Transistor Type	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor BUL45D2G	10	13 MHz	5 A	NPN	150 °C	-65 °C	500 mV	TO-220-3	400 V	Through Hole	100 µA	75 W	TO-220
ON Semiconductor BUL45	14	12 MHz	5 A	NPN	150 °C	-65 °C		TO-220-3	400 V	Through Hole	100 µA	75 W	TO-220	400 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

BUL45D2 Series

The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.

Documents

Technical documentation and resources

Datasheet

Package Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P

Package Drawing