Discrete Semiconductor Products
BUL45D2G
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 400 V, 5 A, 75 W, TO-220, THROUGH HOLE
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Discrete Semiconductor Products
BUL45D2G
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 400 V, 5 A, 75 W, TO-220, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | BUL45D2G |
|---|---|
| Current - Collector (Ic) (Max) | 5 A |
| Current - Collector Cutoff (Max) [Max] | 100 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 10 |
| Frequency - Transition | 13 MHz |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 75 W |
| Supplier Device Package | TO-220 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic [Max] | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.90 | |
| 10 | $ 1.88 | |||
| 100 | $ 1.29 | |||
| 500 | $ 1.05 | |||
| 1000 | $ 0.96 | |||
| 2000 | $ 0.90 | |||
| 5000 | $ 0.87 | |||
| Newark | Each | 1 | $ 3.23 | |
| 10 | $ 2.58 | |||
| 100 | $ 1.96 | |||
| 500 | $ 1.84 | |||
| 1000 | $ 1.73 | |||
| 2500 | $ 1.63 | |||
| ON Semiconductor | N/A | 1 | $ 0.92 | |
Description
General part information
BUL45D2 Series
The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.
Documents
Technical documentation and resources
