BUL45D2 Series

5.0 A, 400 V NPN Bipolar Power Transistor

Catalog

5.0 A, 400 V NPN Bipolar Power Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Current - Collector (Ic) (Max)	Transistor Type	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor BUL45D2G	10	13 MHz	5 A	NPN	150 °C	-65 °C	500 mV	TO-220-3	400 V	Through Hole	100 µA	75 W	TO-220
ON Semiconductor BUL45	14	12 MHz	5 A	NPN	150 °C	-65 °C		TO-220-3	400 V	Through Hole	100 µA	75 W	TO-220	400 mV

Catalog

5.0 A, 400 V NPN Bipolar Power Transistor

Key Features

• Low Base Drive Requirement

• High Peak DC Current Gain (55 Typical) @ IC= 100 mA

• Extremely Low Storage Time Min/Max GuaranteesDue to the H2BIP Structure which Minimizes the Spread

• Integrated Collector-Emitter Free Wheeling Diode

• Fully Characterized and Guaranteed Dynamic VCE(sat)

• "6 Sigma" Process Providing Tight and Reproductible Parameter Spreads

• Pb-Free Package is Available

Description

The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.