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Discrete Semiconductor Products
JAN2N6306
ActiveMicrochip Technology
NPN SILICON POWER 250V TO 350V, 8A
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Search across all available documentation for this part.
Documents2N6306 and 2N6308
Discrete Semiconductor Products
JAN2N6306
ActiveMicrochip Technology
NPN SILICON POWER 250V TO 350V, 8A
Deep-Dive with AI
Documents2N6306 and 2N6308
Technical Specifications
Parameters and characteristics for this part
| Specification | JAN2N6306 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 8 A |
| Current - Collector Cutoff (Max) [Max] | 50 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 15 hFE |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-3, TO-204AA |
| Qualification | MIL-PRF-19500/498 |
| Supplier Device Package | TO-204AA (TO-3) |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 5 V |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 49.29 | |
| Microchip Direct | N/A | 1 | $ 53.07 | |
Description
General part information
JAN2N6306-Transistor Series
This specification covers the performance requirements for NPN silicon, power 2N6306 and 2N6308 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/498.
Documents
Technical documentation and resources