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SOT-23-3
Discrete Semiconductor Products

SI2319DS-T1-GE3

LTB

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DocumentsDatasheet
SOT-23-3
Discrete Semiconductor Products

SI2319DS-T1-GE3

LTB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSI2319DS-T1-GE3
Current - Continuous Drain (Id) @ 25°C2.3 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC
Input Capacitance (Ciss) (Max) @ Vds470 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)750 mW
Rds On (Max) @ Id, Vgs82 mOhm
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.72
10$ 0.62
100$ 0.43
500$ 0.36
1000$ 0.31
Digi-Reel® 1$ 0.72
10$ 0.62
100$ 0.43
500$ 0.36
1000$ 0.31
Tape & Reel (TR) 3000$ 0.27
6000$ 0.26
9000$ 0.24
30000$ 0.24

Description

General part information

SI2319 Series

P-Channel 40 V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Documents

Technical documentation and resources