SI2319 Series

Catalog

MOSFET P-CH 40V 4.4A SOT23-3

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Power Dissipation (Max)	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI2319CDS-T1-GE3	40 V	2.5 V	MOSFET (Metal Oxide)	1.25 W 2.5 W	SOT-23-3 (TO-236)	20 V	77 mOhm	-55 °C	150 °C	Surface Mount	SC-59 SOT-23-3 TO-236-3	P-Channel	4.4 A	4.5 V 10 V	595 pF	21 nC
Vishay General Semiconductor - Diodes Division SI2319CDS-T1-BE3	40 V	2.5 V	MOSFET (Metal Oxide)	1.25 W 2.5 W	SOT-23-3 (TO-236)	20 V	77 mOhm	-55 °C	150 °C	Surface Mount	SC-59 SOT-23-3 TO-236-3	P-Channel	3.1 A 4.4 A	4.5 V 10 V	595 pF	21 nC
Vishay General Semiconductor - Diodes Division SI2319DDS-T1-GE3	40 V	2.5 V	MOSFET (Metal Oxide)		SOT-23-3 (TO-236)	20 V	75 mOhm	-55 °C	150 °C	Surface Mount	SC-59 SOT-23-3 TO-236-3	P-Channel	2.7 A 3.6 A	4.5 V 10 V	650 pF		19 nC
Vishay General Semiconductor - Diodes Division SI2319DS-T1-GE3	40 V	3 V	MOSFET (Metal Oxide)	750 mW	SOT-23-3 (TO-236)	20 V	82 mOhm	-55 °C	150 °C	Surface Mount	SC-59 SOT-23-3 TO-236-3	P-Channel	2.3 A	10 V	470 pF		17 nC